Hafnium Acetylacetonate
Hf(CH₃COCHCOCH₃)₄
17475-67-1

Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance.

It is generally immediately available in most volumes. Ultra high purity and high purity forms may be considered. Hafnium Acetylacetonate is one of numerous organo-metallic compounds sold by American Elements under the tradename AE Organo-Metallics™ for uses requiring non-aqueous solubility such as recent solar energy and water treatment applications. Similar results can sometimes also be achieved with Nanoparticles (also see Nanotechnology and Quantum Dots) and by thin film deposition. Note American Elements additionally supplies many materials as solutions. The numerous commercial applications for Hafnium include primary component in nuclear control rods, dopant in the alloy of steel and titanium, and it is also used in the production of mantles for high intensity incandescent lamps. Additional technical, research and safety (MSDS) information is available.

Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f¹⁴ 5d² 6s². In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm.