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Hafnium Oxide Tablets |
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HfO2 12055-23-1 |
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American Elements specializes in producing high purity unifrom shaped Hafnium Oxide Tablets with the highest possible density and smallest possible average grain sizes for use in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Our standard Tablet sizes average in the range of 3 mm, 4 -5 mm, 10 - 50 mm, 1/8" and 1/4". We can also provide Tablets outside this range.
Hafnium is replacing polysilicon as the principle gate or electrode material in metal oxide semiconductor field effect transistors (MOSFETs) which are the basis for all modern semiconductors. As semiconductors have gotten smaller, the limiting factor in further size reduction has been the ability of the silicon oxide gate to perform below 10 angstroms where leakage occurs. Recent research has been devoted to the development of High-k materials which can function as a di-electric barrier or gate with lower leakage. Using hafnium based alloys as this di-electric gate has allowed for the development of MOSFET gates smaller than 10 angstroms. This allows for further size reduction, reduced switching power requirements and improved performance. We also produce Hafnium Oxide as pellets, pieces, powder, and sputtering target. Oxide compounds are not conductive to electricity. See research below. Other shapes are available by request. Hafnium is a Block D, Group 4, Period 6 element. The electronic configuration is [Xe] 4f14 5d2 6s2. In its elemental form hafnium's CAS number is 7440-58-6. The hafnium atom has a radius of 156.4.pm and it's Van der Waals radius is 200.pm. |
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Recent Research & Development for Hafnium Oxide
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