American Elements
Amorphous Silicon
Si (p-type and n-type)
7440-21-3
Product
Product Code
Order or Specifications
99.99% Amorphous Silicon
SI-M-04-AM
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99.995% Amorphous Silicon
SI-M-045-AM
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99.999% Amorphous Silicon
SI-M-05-AM
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99.9999% Amorphous Silicon
SI-M-06-AM
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Amorphous Silicon for solar energy applications includes p-type and n-type silicon. Find Safety and Research information below. Silicon-based photovoltaic cells (PV Cells) for solar energy are fabricated from a positively charged or p-type silicon layer underneath a negatively charged or n-type silicon layer. These layers can be produced from casted Amorphous material sold under the AE Solar Energy group.  Most silicon-based PV solar cells are produced from Amorphous silicon with single crystal systems the next most common. Silicon Metal is also  available as single crystal, amorphous silicon, disc, granules, ingot, pellets, pieces, powder , rod, sputtering target, wire, and other forms and custom shapes. Ultra high purity and high purity forms also include submicron powder and nanoscale powder. Amorphous Silicon is generally immediately available in most volumes. Technical, research and safety (MSDS) information is available.

Silicon is a Block P, Group 14, Period 3 element. The electronic configuration is [Ne] 3s2 3p2. In its elemental form silicon's CAS number is 7440-21-3. The silicon atom has a radius of 117.6.pm and it's Van der Waals radius is 210.pm.

Formula CAS No. Appearance Molecular Weight Density Melting Point Boiling Point
Si 7440-21-3 Silvery 28.08 2330 kg/m³ 1414 °C 2900 °C
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News
 Submicroniques et nanopoudres Tolling Ultra haute pureté Sputtering Public Crystal Growth Rod, Plate, poudre, etc.
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Recent Research & Development for Silicon Metal

  • Remotely adjustable check-valves with an electrochemical release mechanism for implantable biomedical microsystems.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Implantable microscale neural interfaces.
    Biomed Microdevices. 2007 Jan 25; [Epub ahead of print]

  • Towards electrically conductive, self-healing materials.
    J R Soc Interface. 2007 Jan 3; [Epub ahead of print]

  • Skin capacitance imaging of acne lesions.
    Skin Res Technol. 2007 Feb;13(1):9-12.

  • Effects of charge and size on condensation of supersaturated water vapor on nanoparticles of SiO(2).
    J Chem Phys. 2007 Jan 21;126(3):034701.

  • Electronic Properties of Si and Ge Atoms Doped In Clusters: In(n)()Si(m)() and In(n)()Ge(m)().
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2007 Feb 1;111(4):573-7.

  • Molecular Recognition Forces between Immunoglobulin G and a Surface Protein Adhesin on Living Staphylococcus aureus.
    Langmuir. 2007 Jan 24; [Epub ahead of print]

  • Syntheses and X-ray Diffraction, Photochemical, and Optical Characterization of Cu(2)Si(x)()Sn(1-)(x)()S(3) (0.4 </= x </= 0.6) for Photovoltaic Applications.
    Inorg Chem. 2007 Jan 24; [Epub ahead of print]

  • Adsorption of Trimethoxysilane and of 3-Mercaptopropyltrimethoxysilane on Silica and on Silicon Wafers from Vapor Phase: An IR Study.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

  • Comparison of Protein Surface Attachment on Untreated and Plasma Immersion Ion Implantation Treated Polystyrene: Protein Islands and Carpet.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

 

 

 

 

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